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| BSS670S2L OptiMOS(R) Buck converter series Feature *N-Channel Product Summary VDS RDS(on) ID SOT 23 55 650 0.54 V m A *Enhancement mode *Logic Level Drain pin 3 Type BSS670S2L Package SOT 23 Ordering Code Q67042-S4052 Marking BSs Gate pin1 Source pin 2 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value Unit A 0.54 0.43 ID puls 2.2 Pulsed drain current TA=25C Gate source voltage Power dissipation TA=25C VGS Ptot 20 0.36 V W Operating and storage temperature IEC climatic category; DIN IEC 68-1 Tj , Tstg -55... +150 55/150/56 C Page 1 2003-03-17 BSS670S2L Thermal Characteristics Parameter Symbol min. Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Values typ. max. Unit RthJS - - 290 K/W RthJA 350 300 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS=0, ID=1mA Values typ. max. Unit V(BR)DSS 55 - - V Gate threshold voltage, V GS = VDS ID=2.7A VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=55V, V GS=0, T j=25C VDS=55V, V GS=0, T j=150C IDSS IGSS 0.01 10 1 1 100 100 A Gate-source leakage current VGS=20V, VDS=0V nA Drain-source on-state resistance VGS=4.5V, ID=270mA RDS(on) - 430 825 m Drain-source on-state resistance VGS=10V, ID=270mA RDS(on) - 346 650 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-03-17 BSS670S2L Electrical Characteristics Parameter Symbol Conditions min. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max , ID=0.54A Values typ. max. Unit 0.6 1.2 - S Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Ciss Coss Crss t d(on) tr t d(off) tf VGS=0, VDS =25V, f=1MHz - 56 13 7 9 25 21 24 75 18 10 14 37 31 32 pF VDD=30V, VGS=4.5V, ID=0.54A, RG =130 - ns Q gs Q gd Qg VDD=40V, ID=0.54A - 0.19 0.57 1.7 0.25 0.86 2.26 nC VDD=40V, ID=0.54A, VGS=0 to 10V - Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge V(plateau) VDD=40V, ID=0.54A - 3.1 - V IS TA=25C - - 0.38 A ISM VSD trr Qrr VGS =0, IF =0.54A VR =30V, IF =lS , diF /dt=100A/s - 0.8 51 22 2.2 1.1 64 28 V ns nC Page 3 2003-03-17 BSS670S2L 1 Power dissipation Ptot = f (TA) 2 Drain current ID = f (TA) parameter: VGS 10 V 0.38 BSS670S2L 0.6 BSS670S2L W 0.32 0.28 A 0.5 0.45 0.4 P tot ID 0.35 0.3 0.25 0.2 0.15 0.1 0.05 20 40 60 80 100 120 0.24 0.2 0.16 0.12 0.08 0.04 0 0 C 160 0 0 20 40 60 80 100 120 C 160 TA TA 4 Transient thermal impedance ZthJS = f (tp) parameter : D = tp/T 10 3 BSS670S2L 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , T A = 25 C 10 1 BSS670S2L K/W A /ID tp = 23.0s 100 s 10 0 R = n) (o DS V DS 10 2 ZthJS 1 ms 10 ms 10 1 ID 10 -1 10 0 D = 0.50 0.20 10 -1 0.10 0.05 single pulse 0.02 0.01 10 -2 DC 10 -2 10 -3 -1 10 10 0 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-03-17 BSS670S2L 5 Typ. output characteristic ID = f (VDS); Tj=25C parameter: t p = 80 s 3 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 1500 A 10V 6V 5V 4.5V m 1200 1100 1000 900 800 700 600 ID 2 4V 3.5V 4V 4.5V 5V 6V 10V 1.5 1 R DS(on) 4 3.5V 500 400 0.5 3V 300 200 100 0 0 0.5 1 1.5 2 2.5 3 3.5 V5 VDS 0 0 0.2 0.4 0.6 0.8 A ID 1.2 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x R DS(on)max parameter: t p = 80 s 2.2 8 Typ. forward transconductance gfs = f(ID); Tj=25C parameter: gfs 2.2 A 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 S 1.8 1.6 gfs V5 VGS Page 5 ID 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.2 A ID 2003-03-17 BSS670S2L 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 270 mA, VGS = 10 V 1900 BSS670S2L 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.5 m 1600 V V GS(th) RDS(on) 1400 1200 1000 800 600 400 200 0 -60 10 A 1.5 2 A 98% 1 typ 0.5 -20 20 60 100 C 180 0 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz 10 3 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 1 BSS670S2L pF A 10 2 C Coss Crss 10 1 IF 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 Ciss 10 0 10 0 0 5 10 15 20 V VDS 30 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-03-17 BSS670S2L 13 Typ. gate charge VGS = f (Q Gate) parameter: I D = 0.54 A pulsed 16 BSS670S2L 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: I D=10 mA 66 BSS670S2L V V 12 V(BR)DSS 0,8 VDS max 62 VGS 10 0,2 VDS max 8 60 58 6 56 4 54 2 52 0 0 0.4 0.8 1.2 1.6 2 nC 2.6 50 -60 -20 20 60 100 C 180 QGate Tj Page 7 2003-03-17 BSS670S2L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-03-17 |
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